RFCM3050 Datasheet, PDF (2/6 Pages) RF Micro Devices – 40-1003MHZ GAAS/GAN POWER DOUBLER MODULE

Absolute Maximum Ratings
Parameter
RF Input Voltage (single tone)
DC Supply Over-Voltage (5 minutes)
Storage Temperature
Operating Mounting Base Temperature
Rating
70
30
-40 to +100
-30 to +100
Unit
dBmV
V
°C
°C
RFCM3050
40-1003MHZ GAAS/GAN
POWER DOUBLER MODULE
Parameter
Overall
Power Gain
Slope^[1]
Flatness of Frequency Response
Input Return Loss
Output Return Loss
Noise Figure
Total Current Consumption (DC)
Distortion data 40MHz to 550MHz
CTB
XMOD
CSO
CIN
Specification
Min.
Typ.
Max.
23.5
24.5
0.5
-20
-18
-17
-16
-20
-19
-18
-17
24.0
25.0
1.0
24.5
26.0
2.0
0.8
5.0
420.0
5.5
440.0
-75
-70
-70
-65
-70
-65
60
66
Unit
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
mA
dBc
dBc
dBc
dB
Condition
V+= 24V; TMB=30°C; ZS=ZL=75Ω
f=50MHz
f=1003MHz
f=40MHz to 1003MHz
f=40MHz to 1003MHz
f=40MHz to 320MHz
f=320MHz to 640MHz
f=640MHz to 870MHz
f=870MHz to 1003MHz
f=40MHz to 320MHz
f=320MHz to 640MHz
f=640MHz to 870MHz
f=870MHz to 1003MHz
f=50MHz to 1003MHz
V+= 24V; TMB=30°C; ZS=ZL=75Ω
VO=56.4dBmV at 1000MHz, 13.4dB extrapolated tilt, 79
analog channels plus 75 digital channels (-6dB offset)^[2]
VO=56.4dBmV at 1000MHz, 13.4dB extrapolated tilt, 79
analog channels plus 75 digital channels (-6dB offset)^[2]
VO=56.4dBmV at 1000MHz, 13.4dB extrapolated tilt, 79
analog channels plus 75 digital channels (-6dB offset)^[2]
VO=56.4dBmV at 1000MHz, 13.4dB extrapolated tilt, 79
analog channels plus 75 digital channels (-6dB offset)^[2]
1. The slope is defined as the difference between the gain at the start frequency and the gain at the stop frequency.
2. 79 analog channels, NTSC frequency raster: 55.25MHz to 547.25MHz, +43dBmV to +50dBmV tilted output level, plus 75 digital
channels, -6dB offset relative to the equivalent analog carrier.Composite Second Order (CSO) - The CSO parameter (both sum and
difference products) is defined by the NCTA.Composite Triple Beat (CTB) - The CTB parameter is defined by the NCTA.Cross Modulation
(XMOD) - Cross modulation (XMOD) is measured at baseband (selective voltmeter method), referenced to 100% modulation of the car-
rier being tested.Carrier to Intermodulation Noise (CIN) - The CIN parameter is defined by ANSI/SCTE 17 (Test procedure for carrier to
noise).
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