RFCM3050 Datasheet, PDF (1/6 Pages) RF Micro Devices – 40-1003MHZ GAAS/GAN POWER DOUBLER MODULE

RFCM3050
Features
 Excellent Linearity
 Superior Return Loss Performance
 Extremely Low Distortion
 Optimal Reliability
 Low Noise
 Unconditionally Stable Under all
Terminations
 High Output Capability
 24.5dB Min. Gain at 1003MHz
 440mA Max. at 24VDC
Applications
 40MHz to 1003MHz CATV Amplifier
Systems
RFCM3050
40-1003MHZ GAAS/GAN
POWER DOUBLER MODULE
Package: 9 pin, 11.0 mm x 8.5 mm x 1.375mm
Functional Block Diagram
Product Description
The RFCM3050 is a Power Doubler amplifier SMD module. The part employs GaAs MESFET,
GaAs pHemt and GaN Hemt die, has high output capability, and is operated from 40MHz to
1003MHz. It provides excellent linearity and superior return loss performance with low noise
and optimal reliability. DC current of the device can be externally adjusted for optimum
distortion performance vs. power consumption over a wide range of output level.
DC current of the device can be externally adjusted for optimum distortion performance
versus power consumption over a wide range of output level.
Ordering Information
RFCM3050SB
RFCM3050SQ
RFCM3050SR
RFCM3050TR7
RFCM3050TR13
RFCM3050PCBA-410
RFCM3050PCK-410
Sample Bag 5 pieces
Sample Bag 25 pieces
7” Reel with 100 pieces
7” Reel with 500 pieces
13” Reel with 1000 pieces
Fully Assembled Evaluation Board
Fully Assembled Evaluation Board with Sample Pack
GaAs HBT
GaAs MESFET
InGaP HBT
Optimum Technology Matching® Applied
SiGe BiCMOS
GaAs pHEMT
Si BiCMOS
Si CMOS
SiGe HBT
Si BJT
GaN HEMT
RF MEMS
LDMOS
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trademarks are the properly of their respective owners. ©2009, RF Micro Devices, Inc.
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