SBF4089Z Datasheet, PDF (2/8 Pages) RF Micro Devices – DC to 500MHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER

SBF4089Z
Absolute Maximum Ratings
Parameter
Rating
Unit
Device Current (I_D)
Device Voltage (V_D)
Max Operating Dissipated Power
150
mA
6
V
0.8
W
Max Input Power Rating
15
dBm
Junction Temp (T_J)
Operating Temp Range (T_L)
Storage Temp
+150
°C
-40 to +85
°C
+150
°C
ESD Rating - Human Body Model
(HBM)
Class 1C
Moisture Sensitivity Level
MSL 2
Operation of this device beyond any one of these limits may cause permanent dam-
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
I_DV_D<(T_J-T_L)/R_TH, j-l and T_L=T_LEAD
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free
per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric
materials and red phosphorus as a flame retardant, and <2% antimony in
solder.
Typical RF Performance at Key Operating Frequencies
Parameter
Unit 70MHz 100MHz 240MHz 400MHz 500MHz 850MHz
Small Signal Gain
dB
14.9
14.9
14.9
14.8
14.7
14.3
Output Third Order Intercept Point dBm
40.0
40.5
42.5
41.0
40.0
35.1
Output Power at 1dB Compression dBm
20.1
20.1
20.1
19.9
20.1
18.1
Input Return Loss
dB
18
22
22
21
21
19
Output Return Loss
dB
15
16
17
19
21
18
Reverse Isolation
dB
18
18
18
18
18
18
Noise Figure
dB
3.2
3.3
3.3
3.3
3.3
3.3
Test Conditions: V_S=8V, I_D=90mA Typ., OIP₃ Tone Spacing=1MHz, P_OUT per tone=0dBm. T_L=25°C, R_BIAS=33, Z_S=Z_L=50, App circuit.
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DS111011