SBF4089Z Datasheet, PDF (1/8 Pages) RF Micro Devices – DC to 500MHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER

SBF4089ZDC
to 500MHz,
Cascadable
InGaP/GaAs
HBT MMIC
Amplifier
SBF4089Z
DC to 500MHz, CASCADABLE InGaP/GaAs
HBT MMIC AMPLIFIER
Package: SOT-89
Product Description
RFMD’s SBF4089Z is a high performance InGaP/GaAs Heterojunction Bipolar Tran-
sistor MMIC Amplifier. A Darlington configuration designed with InGaP process tech-
nology provides broadband performance up to 0.5GHz with excellent thermal
performance. The heterojunction increases breakdown voltage and minimizes leak-
age current between junctions. Cancellation of emitter junction non-linearities
results in higher suppression of intermodulation products. Only a single positive
supply voltage, DC-blocking capacitors, a bias resistor, and an optional RF choke
are required for operation.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
 InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
InP HBT
RF MEMS
LDMOS
16
15.5
15
14.5
14
13.5
13
12.5
12
11.5
11
0
S-Parameters vs Frequency +25c
0
s 21
s 11
s22 ^-5
-10
-15
-20
-25
100 200 300 400 500 600 700 800 900
Freq
Features
 IP₃=42dBm at 240MHz
 Stable Gain Over
Temperature
 Robust 1000V ESD, Class 1C
 Operates From Single Supply
 Low Thermal Resistance
Applications
 Receiver IF Amplifier
 Cellular, PCS, GSM, UMTS
 PA Driver Amplifier
 Wireless Data, Satellite
Terminals
Parameter
Specification
Min.
Typ.
Max.
Unit
Condition
Small Signal Gain
14.9
dB
70 MHz
13.3
14.8
16.3
dB
240 MHz
13.2
14.7
16.2
dB
500 MHz
Output Power at 1dB Compression
20.1
dBm
70 MHz
20.1
dBm
240 MHz
18.4
19.9
dBm
400 MHz
Output Third Order Intercept Point
40.0
dBm
70 MHz
42.0
dBm
240 MHz
39.0
41.0
dBm
400 MHz
Input Return Loss
13.0
17.0
dB
500 MHz
Output Return Loss
12.0
16.0
dB
500 MHz
Noise Figure
3.3
4.3
dB
500 MHz
Device Operating Voltage
4.5
4.9
5.3
V
Device Operating Current
82
90
98
mA
Thermal Resistance
43
°C/W
junction to lead
Test Conditions: V_S=8V, I_D=90mA Typ., T_L=25°C. OIP₃ Tone Spacing=1MHz, P_OUT per tone=0dBm, R_BIAS=33. Data with Application Circuit.
DS111011
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at ([phone] or [e-mail].
1 of 8