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RJG0601JSP_16 Datasheet, PDF (9/13 Pages) Renesas Technology Corp – ±60V, ±1.5A, N Channel, P Channel | |||
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RJG0601JSP
Static Drain to Source On State Resistance
vs. Temperature
500
Pulse Test
400
ID = ï0.75 A
ï0.5 A
300
VGS = ï6 V
200
100
ï10 V
ID = ï0.5 A, ï0.75 A
0
ï50 ï25 0 25 50 75 100 125 150
Case Temperature Tc (ï°C)
Switching Characteristics
10
tr
td(on)
1
td(off)
tf
VGS = ï10 V, VDD = ï30 V
0.1 PW = 300 ïs, duty ⤠1 %
ï0.1
ï1
ï10
Drain Current ID (A)
Reverse Drain Current vs.
Source to Drain Voltage
â2.0
â10 V
â1.5
Pulse Test
â1.0
â0.5
â5 V
VGS = 0 V
0
â0.4 â0.8 â1.2 â1.6 â2.0
Source to Drain Voltage VSD (V)
Preliminary
1000
Body-Drain Diode Reverse
Recovery Time
100
10
ï0.1
di / dt = 50 A /ïs
VGS = 0, Ta = 25ï°C
ï1
ï10
Reverse Drain Current IDR (A)
1000
Typical Capacitance vs.
Drain to Source Voltage
VGS = 0
f = 1 MHz
Coss
100
10
0 ï10 ï20 ï30 ï40 ï50 ï60
Drain to Source Voltage VDS (V)
Gate to Source Voltage vs.
Shutdown Time of Load-Short Test
ï16
ï14
ï12
ï10
VDD = ï16 V
ï8
ï6
ï4
ï2
0
1
10
100
Shutdown Time of Load-Short Test Pw (ms)
R07DS1213EJ0200 Rev.2.00
Nov 01, 2016
Page 9 of 12
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