RJG0601JSP_16 Datasheet, PDF (3/13 Pages) Renesas Technology Corp – ±60V, ±1.5A, N Channel, P Channel

RJG0601JSP
Preliminary
Typical Operation Characteristics P Channel
Item
Input voltage
Input current
(Gate non shut down)
Input current
(Gate shut down)
Shut down temperature
Gate operation voltage
Drain current
(Current limitation value)
Notes: 8. Pulse test
Symbol
VIH
VIL
IIH1
IIH2
IIL
IIH(sd)1
IIH(sd)2
Tsd
Min
–3.5
—
—
—
—
—
—
—
Vop
ID limt
–3.5
–1.5
Typ
—
—
—
—
—
–0.8
–0.35
175
Max
—
–1.2
–100
–50
–10
—
—
—
—
–12
—
–4
Unit
V
V
A
A
A
mA
mA
C
V
A
(Ta = 25°C)
Test Conditions
Vi = –8 V, VDS = 0
Vi = –3.5 V, VDS = 0
Vi = –1.2 V, VDS = 0
Vi = –8 V, VDS = 0
Vi = –3.5 V, VDS = 0
Channel temperature
(dv/dt VGS  500 V/ms)
VGS = –12 V, VDS = –10 V ^{Note 8}
Electrical Characteristics P Channel
Item
Drain current
Drain to source breakdown
voltage
Gate to source breakdown
voltage
Gate to source leak current
Input current (shut down)
Zero gate voltage drain current
Symbol
ID1
ID2
ID3
V(BR)DSS
V(BR)GSS
V(BR)GSS
IGSS1
IGSS2
IGSS3
IGSS4
IGS(OP)1
IGS(OP)2
IDSS
Min
—
—
–1.5
–60
–16
2.5
—
—
—
—
—
—
—
Typ
—
—
—
—
—
—
—
—
—
—
–0.8
–0.35
—
Max
–2
–10
–4
—
—
—
–100
–50
–10
100
—
—
–10
Unit
A
mA
A
V
V
V
A
A
A
A
mA
mA
A
Gate to source cutoff voltage
Static drain to source on state
resistance
Output capacitance
VGS(off)
–2.2
—
–3.4
V
RDS(on)
—
242
380
m
RDS(on)
—
173
260
m
Coss
—
194
—
pF
Turn-on delay time
td(on)
—
1.82
—
s
Rise time
tr
—
1.95
—
s
Turn-off delay time
td(off)
—
0.99
—
s
Fall time
tf
—
0.84
—
s
Body-drain diode forward voltage
V_DF
—
–0.83
—
V
Body-drain diode reverse
trr
—
85
—
ns
recovery time
Over load shut down
operation time ^{Note 10}
tos
—
23.6
—
ms
Notes: 9. Pulse test
10. Including the junction temperature rise of the over loaded condition.
(Ta = 25°C)
Test Conditions
VGS = –3.5 V, VDS = –10 V ^Note9
VGS = –1.2 V, VDS = –10 V
VGS = –12 V, VDS = –10 V ^Note9
ID = –10 mA, VGS = 0
IG = –800 A, VDS = 0
IG = 100 A, VDS = 0
VGS = –8 V, VDS = 0
VGS = –3.5 V, VDS = 0
VGS = –1.2 V, VDS = 0
VGS = 2.4 V, VDS = 0
VGS = –8 V, VDS = 0
VGS = –3.5 V, VDS = 0
VDS = –32 V, VGS = 0
Ta = 125C
VDS = –10 V, ID = –1 mA
ID = –0.75 A, VGS = –6 V ^Note9
ID = –0.75 A, VGS = –10 V ^Note9
VDS = –10 V, VGS = 0, f =
1MHz
VGS = –10 V, ID= –0.75 A,
RL = 40 
IF = –1.5 A, VGS = 0
IF = –1.5 A, VGS = 0
diF/dt = 50 A/s
VGS = –5 V, VDD = –16 V
R07DS1213EJ0200 Rev.2.00
Nov 01, 2016
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