RJG0601JSP_16 Datasheet, PDF (5/13 Pages) Renesas Technology Corp – ±60V, ±1.5A, N Channel, P Channel

RJG0601JSP
Static Drain to Source On State Resistance
vs. Temperature
400
I_D = 0.25 A, 0.5 A, 0.75 A
300
200 ^{VGS = 4 V}
100
0
50
10 V
I_D = 0.25 A, 0.5 A, 0.75 A
Pulse Test
25 0 25 50 75 100 125 150
Case Temperature Tc (C)
Switching Characteristics
10
td(off)
tf
tr
1
td(on)
0.1
0.1
V_GS = 10 V, V_DD = 30 V
PW = 300 s, duty ≤ 1 %
1
10
Drain Current I_D (A)
Reverse Drain Current vs.
Source to Drain Voltage
2.0
Pulse Test
1.5
1.0
5V
0.5
V_GS = 0 V
0
0.2 0.4 0.6 0.8 1.0 1.2
Source to Drain Voltage V_SD (V)
Preliminary
1000
Body-Drain Diode Reverse
Recovery Time
100
di / dt = 50 A /s
10
V_GS = 0
0.1
1
10
Reverse Drain Current I_DR (A)
10000
Typical Capacitance vs.
Drain to Source Voltage
V_GS = 0
f = 1 MHz
1000
Coss
100
10
0 10 20 30 40 50 60
Drain to Source Voltage V_DS (V)
Gate to Source Voltage vs.
Shutdown Time of Load-Short Test
16
14
12
10
V_DD = 16 V
8
6
4
2
0
0.1
1
10
Shutdown Time of Load-Short Test Pw (ms)
R07DS1213EJ0200 Rev.2.00
Nov 01, 2016
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