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HAT3008R_15 Datasheet, PDF (9/14 Pages) Renesas Technology Corp – Silicon N / P Channel Power MOS FET High Speed Power Switching | |||
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HAT3008R, HAT3008RJ
P Channel
Power vs. Temperature Derating
4.0
Test Condition:
When using the glass epoxy board
(FR4 40 à 40 à 1.6 mm), PW ⤠10 s
3.0
2.0
1.0
1 Drive Operation
0
0
50
100
150
200
Ambient Temperature Ta (°C)
Typical Output Characteristics
â10
â10 V
â5 V
â8
â4 V
â3.5 V
Pulse Test
â6
â3 V
â4
â2
VGS = â2.5 V
0
0
â2 â4 â6 â8 â10
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
â0.5
Pulse Test
â0.4
â0.3
ID = â2 A
â0.2
â1 A
â0.1
â0.5 A
0
0
â4 â8 â12 â16 â20
Gate to Source Voltage VGS (V)
REJ03G1198-0500 Rev.5.00 Aug 25, 2009
Page 7 of 11
Preliminary
Maximum Safe Operation Area
â100
â30
â10
â3
â1
â0.3
â0.1
10 μs
PW
100
1 ms
μs
DC
Operation in
this area is
limited by RDS
Operation
(on)
= 10 ms
(PW ⤠1N0oste)
8
â0.03 Ta = 25°C
1 shot pulse
â0.01
â0.1 â0.3 â1 â3 â10 â30 â100
Drain to Source Voltage VDS (V)
Note 8:
When using the glass epoxy board
(FR4 40 Ã 40 Ã 1.6 mm)
Typical Transfer Characteristics
â10
VDS = 10 V
Pulse Test
â8
â6
â4
Tc = 75°C
25°C
â2
â25°C
0
0
â1 â2 â3 â4 â5
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
1
Pulse Test
0.5
0.2
0.1
0.05
VGS = â4 V
â10 V
0.02
0.01
â0.1 â0.3 â1 â3 â10 â30 â100
Drain Current ID (A)
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