HAT3008R_15 Datasheet, PDF (8/14 Pages) Renesas Technology Corp – Silicon N / P Channel Power MOS FET High Speed Power Switching

HAT3008R, HAT3008RJ
Reverse Drain Current vs.
Source to Drain Voltage
10
8
10 V
6
5V
V_GS = 0, –5 V
4
2
Pulse Test
0
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V_SD (V)
Vin
15 V
Avalanche Test Circuit
V_DS
Monitor
Rg
50 Ω
L
I_AP
Monitor
D.U.T
V_DD
Preliminary
Maximum Avalanche Energy vs.
Channel Temperature Derating
2.5
I_AP = 5 A
V_DD = 25 V
2.0
L = 100 μH
duty < 0.1 %
Rg ≥ 50 Ω
1.5
1.0
0.5
0
25 50
75 100 125 150
Channel Temperature Tch (°C)
Avalanche Waveform
E_AR =
1
2
• L • I_AP2 •
V_DSS
V_DSS – V_DD
I_AP
I_D
V_(BR)DSS
V_DS
V_DD
0
Switching Time Test Circuit
Vin Monitor
D.U.T.
Vout
Monitor
R_L
Vin
10 V
50 Ω
V_DD
= 30 V
Switching Time Waveform
Vin
Vout
10%
10%
td(on)
90%
tr
90%
90%
td(off)
10%
tf
REJ03G1198-0500 Rev.5.00 Aug 25, 2009
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