HAT3008R_15 Datasheet, PDF (5/14 Pages) Renesas Technology Corp – Silicon N / P Channel Power MOS FET High Speed Power Switching

HAT3008R, HAT3008RJ
P Channel
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain HAT3008R
current
HAT3008RJ
Zero gate voltage drain HAT3008R
current
HAT3008RJ
Gate to source cutoff voltage
Static drain to source on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Note: 6. Pulse test
Symbol
V _{(BR) DSS}
V _{(BR) GSS}
I_GSS
I_DSS
I_DSS
I_DSS
I_DSS
V_{GS (off)}
R_{DS (on)}
R_{DS (on)}
|y_fs|
Ciss
Coss
Crss
t_{d (on)}
t_r
t_{d (off)}
t_f
V_DF
t_rr
Preliminary
Min
–60
±20
—
—
—
—
—
–1.2
—
—
3
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
—
—
—
0.12
0.16
4.5
600
290
75
11
30
100
55
–0.98
70
Max
—
—
±10
–1
–0.1
—
–10
–2.2
0.15
0.23
—
—
—
—
—
—
—
—
–1.28
—
Unit
V
V
μA
μA
μA
μA
μA
V
Ω
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
(Ta = 25°C)
Test Conditions
I_D = –10 mA, V_GS = 0
I_G = ±100 μA, V_DS = 0
V_GS = ±16 V, V_DS = 0
V_DS = –60 V, V_GS = 0
V_DS = –48 V, V_GS = 0
Ta = 125°C
V_DS = –10 V, I_D = –1 mA
I_D = –2 A, V_GS = –10 V ^{Note 6}
I_D = –2 A, V_GS = –4 V ^{Note 6}
I_D = –2 A, V_DS = –10 V ^{Note 6}
V_DS = –10 V
V_GS = 0
f = 1 MHz
V_GS = –10 V, I_D = –2 A
V_DD ≅ –30 V
I_F = –3.5 A, V_GS = 0 ^{Note 6}
I_F = –3.5 A, V_GS = 0
di_F/dt = 50 A/μs
REJ03G1198-0500 Rev.5.00 Aug 25, 2009
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