HAT3008R_09 Datasheet, PDF (9/12 Pages) Renesas Technology Corp – Silicon N / P Channel Power MOS FET High Speed Power Switching

HAT3008R, HAT3008RJ
Reverse Drain Current vs.
Source to Drain Voltage
–10
–8
–6
10 V
–4
5V
V_GS = 0, 5 V
–2
Pulse Test
0
0 –0.4 –0.8 –1.2 –1.6 –2.0
Source to Drain Voltage V_SD (V)
Vin
–15 V
Avalanche Test Circuit
V_DS
Monitor
Rg
50 Ω
L
I_AP
Monitor
D.U.T
V_DD
Preliminary
Maximum Avalanche Energy vs.
Channel Temperature Derating
2.5
I_AP = –3.5 A
V_DD = –25 V
2.0
L = 100 μH
duty < 0.1 %
Rg ≥ 50 Ω
1.5
1.0
0.5
0
25 50
75 100 125 150
Channel Temperature Tch (°C)
Avalanche Waveform
E_AR =
1
2
• L • I_AP2 •
V_DSS
V_DSS – V_DD
I_AP
I_D
V_(BR)DSS
V_DS
V_DD
0
Switching Time Test Circuit
Vin Monitor
D.U.T.
Vout
Monitor
R_L
Vin
–10 V
50 Ω
V_DD
= –30 V
Switching Time Waveform
Vin
10%
90%
90%
90%
Vout
td(on)
10%
tr
td(off)
10%
tf
REJ03G1198-0500 Rev.5.00 Aug 25, 2009
Page 9 of 11