HAT3008R_09 Datasheet, PDF (1/12 Pages) Renesas Technology Corp – Silicon N / P Channel Power MOS FET High Speed Power Switching

HAT3008R, HAT3008RJ
Silicon N / P Channel Power MOS FET
High Speed Power Switching
Features
• For Automotive Application (at Type Code “J”)
• Low on-resistance
• Capable of 4 V gate drive
• High density mounting
Outline
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8 <FP-8DAV> )
78
DD
56
DD
87 ⁶⁵
1234
2
4
G
G
S1
Nch
S3
Pch
Preliminary
REJ03G1198-0500
Rev.5.00
Aug 25, 2009
1, 3
2, 4
5, 6, 7, 8
Source
Gate
Drain
Absolute Maximum Ratings
Item
Symbol
Value
Nch
Pch
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
HAT3008R
HAT3008RJ
Avalanche energy
HAT3008R
HAT3008RJ
Channel dissipation
Channel dissipation
V_DSS
V_GSS
I_D
I_{D (pulse)} ^{Note 1}
I_DR
I_AP ^{Note 4}
E_AR ^{Note 4}
Pch ^{Note 2}
Pch ^{Note 3}
60
±20
5
40
5
—
5
—
2.14
2
3
–60
±20
–3.5
–28
–3.5
—
–3.5
—
1.05
2
3
Channel temperature
Tch
150
150
Storage temperature
Tstg
–55 to +150 –55 to +150
Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1%
2. 1 Drive operation: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
3. 2 Drive operation: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
4. Value at Tch = 25°C, Rg ≥ 50 Ω
(Ta = 25°C)
Unit
V
V
A
A
A
—
A
—
mJ
W
W
°C
°C
REJ03G1198-0500 Rev.5.00 Aug 25, 2009
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