HAT3008R_09 Datasheet, PDF (8/12 Pages) Renesas Technology Corp – Silicon N / P Channel Power MOS FET High Speed Power Switching

HAT3008R, HAT3008RJ
Static Drain to Source on State Resistance
vs. Temperature
0.5
Pulse Test
0.4
I_D = –2 A
0.3
–1 A
–0.5 A
0.2
V_GS = –4 V
–2 A
0.1
–0.5 A, –1 A
–10 V
0
–40 0
40 80 120 160
Case Temperature Tc (°C)
Body-Drain Diode Reverse
Recovery Time
500
200
100
50
20
10
5
–0.1 –0.2
di / dt = 50 A / μs
V_GS = 0, Ta = 25°C
–0.5 –1 –2 –5 –10
Reverse Drain Current I_DR (A)
Dynamic Input Characteristics
0
0
V_DD = –10 V
I_D = –3.5 A
–25 V
–20
–50 V
–4
–40
V_GS
–8
V_DS
–60
V_DD = –50 V
–12
–25 V
–80
–10 V
–16
–100
0
8
16 24 32
Gate Charge Qg (nc)
–20
40
Preliminary
Forward Transfer Admittance vs.
Drain Current
20
10
Tc = –25°C
5
25°C
2
75°C
1
0.5
0.2
–0.1 –0.2
–0.5 –1
V_DS = 10 V
Pulse Test
–2 –5 –10
Drain Current I_D (A)
2000
1000
500
Typical Capacitance vs.
Drain to Source Voltage
Ciss
V_GS = 0
f = 1 MHz
200
Coss
100
50
Crss
20
10
0 –10 –20 –30 –40 –50
Drain to Source Voltage V_DS (V)
1000
Switching Characteristics
300
td(off)
100
tf
30
tr
td(on)
10
3 _{VGS = –10 V, VDD = –30 V}
PW = 5 μs, duty ≤ 1 %
1
–0.1 –0.2 –0.5 –1 –2
–5 –10
Drain Current I_D (A)
REJ03G1198-0500 Rev.5.00 Aug 25, 2009
Page 8 of 11