RJG0601JSP_15 Datasheet, PDF (8/13 Pages) Renesas Technology Corp – ±60V, ±1.5A, N Channel, P Channel Thermal FET Power Switching

RJG0601JSP
Main Characteristics (P channel)
Power vs. Temperature Derating
4.0
Test condition.
When using the glass epoxy board.
3.0 ^{(FR4 40 x 40 x 1.6 mm), (PW ≤ 10s)}
2.0
1.0
0
1 _{D2rivDerrivOerpOerpaetrioantion}
0
50
100
150
200
Case Temperature Tc (C)
Typical Output Characteristics
1.5
4.5 V
5 V
6 V
8 V
1.0
10 V
Pulse Test
4 V
0.5
3.5 V
V_GS = 0 V
0
2
4
6
8 10
Drain to Source Voltage V_DS (V)
Drain Source Saturation Voltage vs.
Gate to Source Voltage
1000
Pulse Test
800
600
400
200
0.75 A
I_D = 0.5 A
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
R07DS1213EJ0100 Rev.1.00
Jun 20, 2014
Preliminary
Maximum Safe Operation Area
10 _{Ta = 25C}
1 shot Pulse
1 Driver Operation
Thermal shut down operation area
1
0.1
Operation
in this area
is limited R_DS(on)
0.01
0.01
0.1
1
10 100
Drain to Source Voltage V_DS (V)
Note 12:
When using the glass epoxy board.
(FR4 40 x 40 x 1.6 mm)
Typical Transfer Characteristics
2.0
V_DS = 10 V
Pulse Test
1.5
1.0
Tc = 75C
25C
0.5
40C
0
0
2
4
6
8 10
Gate to Source Voltage V_GS (V)
Static Drain to Source On State Resistance
vs. Drain Current
1000
Pulse Test
V_GS = 6 V
10 V
100
10
0.1
1
10
Drain Current I_D (A)
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