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RJG0601JSP_15 Datasheet, PDF (10/13 Pages) Renesas Technology Corp – ±60V, ±1.5A, N Channel, P Channel Thermal FET Power Switching | |||
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RJG0601JSP
Shutdown Case Temperature vs.
Gate to Source Voltage
200
Preliminary
180
160
140
120
ID = ï0.2 A
100 dv/dt VGS ⥠500 V/ms
0
ï2 ï4 ï6
ï8 ï10
Gate to Source Voltage VGS (V)
Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation)
10
1
0.1
0.01
0.001
D=1
0.5
0.2
0.1
0.05
0.02
0.01
1shot pulse
0.0001
10 ï 100 ï 1 m
ï±ch-f(t) = ï§s (t) ï ï ï±ch - f
ï±ch-f = 125 ï°C/W, Ta = 25ï°C
When using the glass epoxy board
(FR4 40 x 40 x 1.6 mm)
P DM
D=
PW
T
PW
T
10 m 100 m 1
10
Pulse Width PW (S)
100 1000 10000
Normalized Transient Thermal Impedance vs. Pulse Width
(Operatioon of 2 devices; allowable value per device)
10
1
0.1
0.01
D=1
0.5
0.2
0.1
0.05
0.02
0.01
0.001
1shot pulse
0.0001
10 ï 100 ï 1 m
ï±ch-f(t) = ï§s (t) ï ï ï±ch - f
ï±ch-f = 166 ï°C/W, Ta = 25ï°C
When using the glass epoxy board
(FR4 40 x 40 x 1.6 mm)
P DM
D=
PW
T
PW
T
10 m 100 m 1
10
Pulse Width PW (S)
100 1000 10000
R07DS1213EJ0100 Rev.1.00
Jun 20, 2014
Page 10 of 12
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