RJG0601JSP_15 Datasheet, PDF (6/13 Pages) Renesas Technology Corp – ±60V, ±1.5A, N Channel, P Channel Thermal FET Power Switching

RJG0601JSP
Shutdown Case Temperature vs.
Gate to Source Voltage
200
Preliminary
180
160
140
120
I_D = 0.2 A
100
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation)
10
D=1
1
0.5
0.1
0.01
0.001
0.2
0.1
0.05
0.02
0.01
1shot ^pulse
0.0001
10  100  1 m
ch-f(t) = s (t) · ch - f
ch-f = 125 C/W, Ta = 25 C
When using the glass epoxy board
(FR4 40 x 40 x 1.6 mm)
P _DM
D=
PW
T
PW
T
10 m 100 m 1
10
Pulse Width PW (S)
100 1000 10000
Normalized Transient Thermal Impedance vs. Pulse Width
(Operatioon of 2 devices; allowable value per device)
10
1
0.1
0.01
D=1
0.5
0.2
0.1
0.05
0.02
0.01
0.001
1shot ^pulse
0.0001
10  100  1 m
ch-f(t) = s (t) · ch - f
ch-f = 166 C/W, Ta = 25 C
When using the glass epoxy board
(FR4 40 x 40 x 1.6 mm)
P _DM
D=
PW
T
PW
T
10 m 100 m 1
10
Pulse Width PW (S)
100 1000 10000
R07DS1213EJ0100 Rev.1.00
Jun 20, 2014
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