NP32N055IDE_15 Datasheet, PDF (8/9 Pages) Renesas Technology Corp – SWITCHING N-CHANNEL POWER MOSFET

NP32N055HDE, NP32N055IDE, NP32N055SDE
PACKAGE DRAWINGS (Unit: mm)
1) TO-251 (JEITA) / MP-3
6.5±0.2
5.0±0.2
4
2.3±0.2
0.5±0.1
123
1.1±0.2
2.3 TYP.
0.5^{+−00..21}
2.3 TYP.
0.5^{+−00..21}
1. Gate
2. Drain
3. Source
4. Fin (Drain)
3) TO-252 (JEDEC) / MP-3ZK
6.5±0.2
5.1 TYP.
4.3 MIN.
4
2.3±0.1
0.5±0.1
No Plating
123
1.14 MAX.
2.3 2.3
No Plating
0.76±0.12
0 to 0.25
0.5±0.1
1.0
1. Gate
2. Drain
3. Source
4. Fin (Drain)
2) TO-252 (JEITA) / MP-3Z
6.5±0.2
2.3±0.2
5.0±0.2
4
DESIGN^0.5±0.1
NEW ^{1 2 3}
1.1±0.2
NOT ^{FOR 2.3 TYP.}
0.9 MAX.
2.3 TYP.
0.8 MAX.
0.8 TYP.
1. Gate
2. Drain
3. Source
4. Fin (Drain)
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Source
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade
the device operation. Steps must be taken to stop generation of static electricity as much as possible, and
quickly dissipate it once, when it has occurred.
6
Data Sheet D15309EJ2V0DS