NP32N055IDE_15 Datasheet, PDF (4/9 Pages) Renesas Technology Corp – SWITCHING N-CHANNEL POWER MOSFET

NP32N055HDE, NP32N055IDE, NP32N055SDE
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
IDSS
VDS = 55 V, VGS = 0 V
Gate Leakage Current
Gate to Source Threshold Voltage
Forward Transfer Admittance ^Note
Drain to Source On-state Resistance ^Note
IGSS
VGS(th)
| yfs |
RDS(on)1
VGS = ±20 V, VDS = 0 V
VDS = VGS, ID = 250 µA
VDS = 10 V, ID = 16 A
VGS = 10 V, ID = 16 A
RDS(on)2 VGS = 5.0 V, ID = 16 A
RDS(on)3 VGS = 4.5 V, ID = 16 A
Input Capacitance
Ciss
VDS = 25 V
Output Capacitance
Coss
VGS = 0 V
Reverse Transfer Capacitance
Crss
f = 1 MHz
Turn-on Delay Time
td(on)
VDD = 28 V, ID = 16 A
Rise Time
Turn-off Delay Time
tr
td(off)
VGS = 10 V
RG = 1 Ω
Fall Time
tf
Total Gate Charge
QG1
VDD = 44 V, VGS = 10 V, ID = 32 A
QG2
VDD = 44 V
Gate to Source Charge
QGS
VGS = 5.0 V
Gate to Drain Charge
Body Diode Forward Voltage ^Note
QGD
VF(S-D)
ID = 32 A
IF = 32 A, VGS = 0 V
Reverse Recovery Time
Reverse Recovery Charge
trr
IF = 32 A, VGS = 0 V
Qrr
di/dt = 100 A/µs
Note Pulsed
MIN. TYP. MAX. UNIT
10 µA
±100 nA
1.5
2
2.5
V
8
16
S
19 24 mΩ
22 29 mΩ
24 33 mΩ
1300 2000 pF
180 270 pF
90 160 pF
14 31 ns
8
20 ns
40 81 ns
7.4 19 ns
27 41 nC
15 23 nC
5
nC
9
nC
1.0
V
41
ns
58
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG = 25 Ω
L
PG.
50 Ω
VDD
VGS = 20 → 0 V
IAS
ID
VDD
BVDSS
VDS
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
PG.
RG
VGS
0
τ
τ = 1 µs
Duty Cycle ≤ 1%
RL
VDD
VGS
VGS
Wave Form
10%
0
VDS
90%
VDS
VDS
0
Wave Form
td(on)
90%
VGS
90%
10% 10%
tr td(off)
tf
ton
toff
D.U.T.
IG = 2 mA
RL
PG.
50 Ω
VDD
2
Data Sheet D15309EJ2V0DS