NP32N055IDE_15 Datasheet, PDF (3/9 Pages) Renesas Technology Corp – SWITCHING N-CHANNEL POWER MOSFET

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP32N055HDE, NP32N055IDE, NP32N055SDE
SWITCHING
N-CHANNEL POWER MOSFET
DESCRIPTION
These products are N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
• Channel temperature 175 degree rated
• Super low on-state resistance
RDS(on)1 = 24 mΩ MAX. (VGS = 10 V, ID = 16 A)
RDS(on)2 = 29 mΩ MAX. (VGS = 5.0 V, ID = 16 A)
• Low Ciss : Ciss = 1300 pF TYP.
ORDERING INFORMATION
PART NUMBER
PACKAGE
NP32N055HDE
NP32N055IDE ^Note
TO-251 (JEITA) / MP-3
TO-252 (JEITA) / MP-3Z
NP32N055SDE
TO-252 (JEDEC) / MP-3ZK
Note Not for new design.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
55
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) ^Note1
ID(DC)
±32
A
ID(pulse)
±100
A
Total Power Dissipation (TC = 25°C)
PT1
66
W
Total Power Dissipation (TA = 25°C)
PT2
1.2
W
Channel Temperature
Tch
175
°C
Storage Temperature
Single Avalanche Current ^Note2
Single Avalanche Energy ^Note2
Tstg
–55 to +175
°C
IAS
28 / 21 / 8
A
EAS
7.8 / 44 / 64
mJ
(TO-251)
(TO-252)
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, RG = 25 Ω , VGS = 20 → 0 V
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
2.27
°C/W
125
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D15309EJ2V0DS00 (2nd edition)
Date Published July 2005 NS CP(K)
Printed in Japan
The mark shows major revised points.
2001, 2005