HAT3029R_16 Datasheet, PDF (8/11 Pages) Renesas Technology Corp – Silicon N/P Channel Power MOS FET Power Switching

HAT3029R
Reverse Drain Current vs.
Source to Drain Voltage
-20
-10 V
-16
-12
-5 V
-8
V_GS = 0 V
-4
Pulse Test
0
-0.4 -0.8 -1.2 -1.6 -2.0
Source to Drain Voltage V_SD (V)
Normalized Transient Thermal Impedance vs. Pulse Width
10
D=1
1 _0.5
0.2
0.1
0.1 _0.05
0.02
0.01
0.001
0.01
1shot ^pulse
0.0001
10 µ 100 µ 1 m
θch - f(t) = γs (t) x θch - f
θch - f = 143°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40x40x1.6 mm)
PDM
PW
T
D=
PW
T
10 m 100 m 1
10
Pulse Width PW (S)
100 1000 10000
Switching Time Test Circuit
Vin Monitor
Rg
Vout
Monitor
D.U.T.
R_L
Vin
-10 V
V_DD
= -10 V
Switching Time Waveform
Vin
10%
90%
90%
90%
Vout
td(on)
10%
tr
td(off)
10%
tf
REJ03G1597-0601 Rev.6.01
Nov. 24, 2016
Page 8 of 9