HAT3029R_16 Datasheet, PDF (3/11 Pages) Renesas Technology Corp – Silicon N/P Channel Power MOS FET Power Switching

HAT3029R
Main Characteristics
 N Channel
Power vs. Temperature Derating
1.6
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW ≤ 10 s
1.2
0.8
0.4
0
50
100
150
200
Ambient Temperature Ta (°C)
Typical Output Characteristics
10
10 V
8
4.5 V
3.4 V ^{Pulse Test}
3.2 V
6
3V
4
2.8 V
2
V_GS = 2.6 V
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
250
Pulse Test
200
150
I_D = 5 A
100
2A
50
1A
0
4
8
12 16 20
Gate to Source Voltage V_GS (V)
REJ03G1597-0601 Rev.6.01
Nov. 24, 2016
Preliminary
Maximum Safe Operation Area
100
10
1
0.1
PW
DC _Operation
Operation in
this area is
= ₁₀
(PW
1 _m1s001^μ0sμs
ms _(1shot)
≤ ₁₀N_{sot)e 5}
limited by R_DS(on)
0.01
Ta = 25°C
0.001 ^{1 shot Pulse}
0.1
1
10
100
Drain to Source Voltage V_DS (V)
Note 5 : When using the glass epoxy board
(FR4 40x40x1.6 mm)
Typical Transfer Characteristics
10
Tc = 75°C
8
V_DS = 10 V
Pulse Test
6
4
2
25°C
–25°C
0
2
4
6
8 10
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
1000
Pulse Test
500
200
100
50
20
10
1
V_GS = 4.5 V
10 V
10
100
Drain Current I_D (A)
1000
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