HAT2142H Datasheet, PDF (8/12 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2142H
Body-Drain Diode Reverse
Recovery Time
100
50
20
di / dt = 100 A / µs
V_GS = 0, Ta = 25°C
10
0.1 0.3 1 3 10 30 100
Reverse Drain Current I _DR (A)
10000
Typical Capacitance vs.
Drain to Source Voltage
3000
Ciss
1000
300
Coss
100
Crss
30
VGS = 0
f = 1 MHz
10
0
10
20 30 40
50
Drain to Source Voltage V _DS (V)
Dynamic Input Characteristics
250
20
I _D = 10 A
200
150
V_DS
100
V_DD = 100 V
50 V
25 V
V_GS ¹⁶
12
8
50
V_DD = 100 V
4
50 V
25 V
0
0
8
16 24 32 40
Gate Charge Qg (nc)
Switching Characteristics
500
V_GS = 10 V, V _DS = 30 V
PW = 5 µs
200
100
t _d(off)
50
20
t _d(on)
tr
10
tf
5
0.1 0.2 0.5 1
2 5 10 20 50 100
Drain Current I _D (A)
Rev.5, Sep. 2002, page 6 of 6