HAT2142H Datasheet, PDF (6/12 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2142H
Main Characteristics
Power vs. Temperature Derating
40
30
20
10
0
50
100
150
200
Case Temperature Tc (°C)
Maximum Safe Operation Area
500
100
10
1 _{Operation in}
this area is
DPCWO=p1¹_e0ra^mmti^s_osn100
10
µ_s
µ_s
limited by R DS(on)
0.1
Tc = 25°C
0.01 ^{1 shot Pulse}
0.1 0.3 1 3 10 30 100
Drain to Source Voltage V_DS (V)
Typical Output Characteristics
10
10 V
Pulse Test
4.5 V
8
4.0 V
6
3.8 V
4
2
V_GS = 3.5 V
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
10
V _DS = 10 V
Pulse Test
8
6
4
25°C
2
Tc = 75°C
-25°C
0
1
2
3
4
5
Gate to Source Voltage V_GS (V)
Rev.5, Sep. 2002, page 4 of 4