HAT2142H Datasheet, PDF (7/12 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

Drain to Source Saturation Voltage vs.
Gate to Source Voltage
400
Pulse Test
300
200
ID = 5 A
100
2A
1A
0
4
8
12 16 20
Gate to Source Voltage V _GS (V)
HAT2142H
Static Drain to Source on State Resistance
vs. Drain Current
100
Pulse Test
50
V_GS = 7 V
10 V
20
10
0.1 0.3 1 3 10 30 100
Drain Current I _D (A)
Static Drain to Source on State Resistance
vs. Temperature
100
Pulse Test
5A
80
I D = 1 A, 2 A
60
V _GS = 7 V
40
1 A, 2 A, 5 A
20 _{10 V}
0
-25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
100
Tc = -25°C
30
10
75°C
25°C
3
1
0.3
0.1
0.1
V _DS = 10 V
Pulse Test
0.3 1 3 10 30 100
Drain Current I _D (A)
Rev.5, Sep. 2002, page 5 of 5