R32C-117A Datasheet, PDF (77/118 Pages) Renesas Technology Corp – R32C/100 Series CPU Core

R32C/117A Group
5. Electrical Characteristics
Table 5.7
Electrical Characteristics of RAM
(V_CC = 3.0 to 5.5 V, V_SS = 0 V, and Ta = T_opr, unless otherwise noted)
Symbol
Characteristic
Measurement
Condition
Value
Min. Typ.
V_RDR RAM data retention voltage
In stop mode
2.0
Unit
Max.
V
Table 5.8
Electrical Characteristics of Flash Memory
(V_CC = 3.0 to 5.5 V, V_SS = 0 V, and Ta = T_opr, unless otherwise noted)
Symbol
Characteristic
Value
Min. Typ. Max.
Unit
— _{Program/erase cycles} ⁽¹⁾
Program area
Data area
1000
10000
Cycles
Cycles
— 4-word program time
Program area
Data area
150 900 µs
300 1700 µs
— Lock bit program time
Program area
70 500 µs
Data area
140 1000 µs
— Block erasure time
4-Kbyte block
0.12 3.0 s
32-Kbyte block
0.17 3.0 s
64-Kbyte block
0.20 3.0 s
t_SUSP
—
Suspend latency
Data retention ⁽²⁾
T_a = 55°C ⁽³⁾
10
250 µs
Years
Notes:
1. Program/erase definition
This value represents the number of erasures per block.
When the number of program/erase cycles is n, each block can be erased n times.
For example, if a 4-word write is performed in 512 different addresses in the 4-Kbyte block A and
then the block is erased, this is counted as a single program/erase operation.
However, the same address cannot be written to more than once per erasure (overwrite disabled).
2. Data retention includes periods when no supply voltage is applied and no clock is provided.
3. Contact a Renesas Electronics sales office for data retention times other than the above condition.
R01DS0067EJ0120 Rev.1.20
Dec 10, 2014
Page 77 of 113