S12744EJ4V0DS00_15 Datasheet, PDF (7/26 Pages) Renesas Technology Corp – 5000 PIXELS CCD LINEAR IMAGE SENSOR

μ PD3739
ELECTRICAL CHARACTERISTICS
TA = +25°C, VOD = 12 V, fφ 1 = 1 MHz, data rate = 2 MHz, storage time = 10 ms
light source: 3200 K halogen lamp + C-500S (infrared cut filter, t = 1 mm), input signal clock = 5 Vp-p
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Saturation voltage
Vsat
1.0
1.5
—
V
Saturation exposure
SE
Daylight color fluorescent lamp
—
0.17
—
lx•s
Photo response non-uniformity PRNU
VOUT = 500 mV
—
4
10
%
Average dark signal
ADS
Light shielding
—
0.3
3.0
mV
Dark signal non-uniformity
DSNU
Light shielding
0
4.0
6.0
mV
Power consumption
PW
Output impedance
ZO
—
200
400
mW
—
0.2
0.5
kΩ
Response
RF
Daylight color fluorescent lamp
7.2
9.0
10.8
V/Ix•s
Response peak
—
550
—
nm
Image lag
IL
VOUT = 1 V
—
0.3
1.0
%
Offset level ^{Note 1}
VOS
2.0
3.5
5.0
V
Output fall delay time ^{Note 2}
td
VOUT = 1 V
—
20
—
ns
Register imbalance
RI
VOUT = 500 mV
0
—
4.0
%
Total transfer efficiency
TTE
VOUT = 500 mV, data rate = 40 MHz
92
98
—
%
Dynamic range
DR1
Vsat/DSNU
—
375
—
times
Reset feed-through noise ^{Note 1}
DR2
RFTN
Vsat/σ
Light shielding
—
2143
—
times
0
400
600
mV
Random noise
σ
Light shielding
—
0.7
—
mV
Notes 1. Refer to TIMING CHART 2, 5.
2. Typical value when the respective fall times of φ 1L2 and φ 2L1 are t11’, t41’ and t2’, t32’ (refer to TIMING
CHART 2, 5). Note that VOUT1 and VOUT2 are the outputs of the two steps of emitter-follower shown in
APPLICATION CIRCUIT EXAMPLE.
Data Sheet S12744EJ4V0DS
5