PD16823_15 Datasheet, PDF (7/10 Pages) Renesas Technology Corp – MONOLITHIC H BRIDGE DRIVER

Battery
DC-DC
converter
VM = 0.5 to 7.5 V
VDD = 3.0 to 6.0 V
C1 = C2 = C3 = 10 nF
C1
C2
C3
VDD
VG
VM
7
23
20 1
19
6
CPU
STBY 18
OSC
CIRCUIT
CHARGE PUMP CIRCUIT
IN1 10
IN2 8
IN3 9
CONTROL
CIRCUIT
Pull-down
resistor: 50 kΩ TYP.
µPD16823GS
LEVEL SHIFT
CIRCUIT
12
DGND
D MOS FET
H BRIDGE
CIRCUIT
(1.5 circuits)
14, 16
PGND
19
VM
C4^Note
1 to 10 µF
15 OUT1
5 OUT2 ^M
17 OUT3 ^M
IN1
L
H
IN2
H
L
H
L
H
IN3
L
H
L
H
1CH
1CH
1CH
2CH
2CH
Forward mode Reverse mode Brake mode Forward mode Reverse mode
2CH
Brake mode
Note It is recommended to connect an external
capacitor of 1 to 10 µF between VM and
GND to protect the gate of the D MOS FET
from voltage surge.
The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.