PD16823_15 Datasheet, PDF (5/10 Pages) Renesas Technology Corp – MONOLITHIC H BRIDGE DRIVER

µPD16823
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Parameter
Symbol
Condition
Ratings
Unit
(Positive) supply voltage
VDD
When charge pump operates
–0.5 to +6.5
V
When charge pump does not operate
–0.5 to +8.0
V
VM
–0.5 to +8.0
V
Gate drive voltage
VG
15
V
Input voltage
VIN
–0.5 to VDD + 0.5
V
H bridge drive current
IDR
DC
Positive: MOS output stage forward current
Negative: Output stage diode current
PW ≤ 200 ms, duty cycle ≤ 50%
PW ≤ 200 ms, single pulse
±0.5
A
±1.0
A
±3.0
A
Power dissipation
PD
1.0
W
Operating temperature
TA
–30 to +60
°C
Junction temperature
Tj(peak)
150
°C
Storage temperature
Tstg
–55 to +150
°C
RECOMMENDED OPERATING CONDITIONS (TA = 25 °C)
Parameter
(Positive) supply voltage
Gate drive voltage
Junction temperature
Symbol
Condition
Ratings
Unit
VDD
When charge pump operates
2.5 to 6.0
V
When charge pump does not operate
2.5 to 7.5
V
VM
–0.5 to +7.5
V
VG
11 to 14
V
Tj(peak)
125
°C
ELECTRICAL CHARACTERISTICS (TA = –30 °C to +60 °C)
Parameter
Symbol
Condition
MIN. TYP. MAX. Unit
VDD pin current
IDD1 VDD = 5 V, with all control pins at high level
2.0 mA
IDD2 VDD = 5 V, with all control pins at low level
10
µA
VM pin current
IM TA = 25 °C, with all control pins at low level
1.0 µA
With all control pins at low level
10
µA
H bridge ON resistance
RON IDR = 0.5 A, VDD = VM = 5 V, TA = 25 °C
0.6 0.8
Ω
Control pin high-level input voltage
VIH
VDD × 0.6
V
Control pin low-level input voltage
VIL
VDD × 0.2 V
Charge pump circuit turn-off time
H bridge circuit turn-ON time
H bridge circuit turn-OFF time
tONC
tONH
tOFFH
VDD = VM = 5 V
C1 = C2 = C2 = 10 nF
IDR = 0.5 A
1.0 ms
10
µs
5.0
µs
Regenerative diode voltage drop
VF IF = 0.5 A
1.0
V
Control pin input pull-down resistance RIN
25
50
75
kΩ
3