NP82N06PLG_15 Datasheet, PDF (7/10 Pages) Renesas Technology Corp – SWITCHING N-CHANNEL POWER MOS FET

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
14
ID = 41 A
12 _Pulsed
10
VGS = 5 V
8
6
10 V
4
2
0
-100 -50 0 50 100 150 200
Tch - Channel Temperature - °C
1000
SWITCHING CHARACTERISTICS
100
td(off)
td(on)
10
VDD = 30 V
VGS = 10 V
RG = 0 Ω
1
0.1
1
tr
tf
10
100
ID - Drain Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
VGS = 10 V
100
5V
10
0V
1
0.1
Pulsed
0.01
0
0.5
1
1.5
VF(S-D) - Source to Drain Voltage - V
NP82N06PLG
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
Ciss
1000
Coss
Crss
VGS = 0 V
f = 1 MHz
100
0.1
1
10
100
VDS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
60
12
VDD = 48 V
50
30 V
10
12 V
40
8
30
20
10
0
0
6
VGS
4
VDS
2
ID = 82 A
0
20 40 60 80 100 120
QG - Gate Charge - nC
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
di/dt = 100 A/μs
VGS = 0 V
10
1
10
100
IF - Diode Forward Current - A
Data Sheet D18777EJ1V0DS
5