NP82N06PLG_15 Datasheet, PDF (6/10 Pages) Renesas Technology Corp – SWITCHING N-CHANNEL POWER MOS FET

DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
300
VGS = 10 V
5V
200
100
Pulsed
0
0
2
4
6
8
10
VDS - Drain to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
2.5
2
1.5
1
0.5
VDS = VGS
ID = 250 μA
0
-100 -50 0
50 100 150 200
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
14
12
10
8
VGS = 5 V
6
4
10 V
2
Pulsed
0
1
10
100
ID - Drain Current - A
1000
NP82N06PLG
FORWARD TRANSFER CHARACTERISTICS
1000
100
VDS = 10 V
Pulsed
10
TA = 175°C
1
150°C
125°C
0.1
85°C
0.01
25°C
−25°C
−55°C
0.001
0
1
2
3
4
5
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
VDS = 10 V
Pulsed
TA = −55°C
−25°C
25°C
10
85°C
125°C
150°C
175°C
1
0.1
1
10
100
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
14
12
10
ID = 82 A
8
41 A
6
4
16.4 A
2
Pulsed
0
0
5
10
15
20
VGS - Gate to Source Voltage - V
4
Data Sheet D18777EJ1V0DS