NP82N04MDG Datasheet, PDF (7/10 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

NP82N04MDG, NP82N04NDG
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
10
8
VGS = 4.5 V
6
4
10 V
2
0
-75
ID = 41 A
Pulsed
-25 25 75 125 175 225
Tch - Channel Temperature - °C
1000
SWITCHING CHARACTERISTICS
100
td(off)
td(on)
10
VDD = 20 V
VGS = 10 V
RG = 0 Ω
1
0.1
1
tr
tf
10
100
ID - Drain Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
100
10
10 V
4.5 V
VGS = 0 V
1
0.1
0.01
0
Pulsed
0.5
1
1.5
VF(S-D) - Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
Ciss
1000
Coss
VGS = 0 V
f = 1 MHz
100
0.1
1
Crss
10
100
VDS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
50
10
VDD = 32 V
40
20 V
8
8V
30
6
VGS
20
4
10
0
0
VDS
2
ID = 82 A
0
20
40
60
80 100
QG - Gate Charge - nC
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
di/dt = 100 A/μs
VGS = 0 V
10
0.1
1
10
100
IF - Diode Forward Current - A
Data Sheet D19800EJ1V0DS
5