NP82N04MDG Datasheet, PDF (5/10 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

NP82N04MDG, NP82N04NDG
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
1000
100
R(^D_V^S(GonS)
Limit
= ^{1i 0}
ed
V)
ID(DC)
ID(Pulse)
DC
PW
= _{1i 00 μs}
10
160
140
120
100
80
60
40
20
0
0
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
25 50 75 100 125 150 175
TC - Case Temperature - °C
1
TC = 25°C
Single Pulse
0.1
0.1
1
10
100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
Rth(ch-A) = 83.3°C/W
10
1
Rth(ch-C) = 1.05°C/W
0.1
0.01
1m
10 m
100 m
1
10
PW - Pulse Width - s
Single Pulse
100
1000
Data Sheet D19800EJ1V0DS
3