NP80N06MLG Datasheet, PDF (7/12 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

NP80N06MLG, NP80N06NLG, NP80N06PLG
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
200
150
10 V
100
VGS = 4.5 V
50
0
0
Pulsed
NP80N06MLG, NP80N06NLG
0.5
1
1.5
2
VDS - Drain to Source Voltage - V
FORWARD TRANSFER CHARACTERISTICS
1000
100
Tch = −55°C
10
−25°C
25°C
1
75°C
125°C
0.1
150°C
175°C
0.01
0.001
0.0001
0
VDS = 10 V
Pulsed
1
2
3
4
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
Tch = −55°C
−25°C
25°C
75°C
10
125°C
1
0.1
150°C
175°C
VDS = 5 V
Pulsed
1
10
100
ID - Drain Current - A
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
200
150
10 V
100
VGS = 4.5 V
50
0
0
Pulsed
NP80N06PLG
0.5
1
1.5
2
VDS - Drain to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
3
2
1
0
-75
VDS = VGS
ID = 250 μA
-25 25 75 125 175 225
Tch - Channel Temperature - °C
Data Sheet D19798EJ1V0DS
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