NP80N06MLG Datasheet, PDF (5/12 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

NP80N06MLG, NP80N06NLG, NP80N06PLG
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
IDSS
VDS = 60 V, VGS = 0 V
Gate Leakage Current
IGSS
VGS = ±20 V, VDS = 0 V
Gate to Source Threshold Voltage
Forward Transfer Admittance ^Note
Drain to Source On-state Resistance ^Note
VGS(th)
| yfs |
RDS(on)1
VDS = VGS, ID = 250 μA
VDS = 5 V, ID = 35 A
VGS = 10 V, ID = 40 A
NP80N06MLG, NP80N06NLG
MIN.
1.4
25
VGS = 10 V, ID = 40 A
NP80N06PLG
RDS(on)2
VGS = 4.5 V, ID = 35 A
NP80N06MLG, NP80N06NLG
VGS = 4.5 V, ID = 35 A
NP80N06PLG
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-on Delay Time
td(on)
Rise Time
tr
Turn-off Delay Time
td(off)
Fall Time
tf
Total Gate Charge
QG
Gate to Source Charge
QGS
Gate to Drain Charge
Body Diode Forward Voltage ^Note
QGD
VF(S-D)
Reverse Recovery Time
trr
Reverse Recovery Charge
Qrr
Note Pulsed test
TEST CIRCUIT 1 AVALANCHE CAPABILITY
VDS = 25 V,
VGS = 0 V,
f = 1 MHz
VDD = 30 V, ID = 40 A,
VGS = 10 V,
RG = 0 Ω
VDD = 48 V,
VGS = 10 V,
ID = 80 A
IF = 80 A, VGS = 0 V
IF = 80 A, VGS = 0 V,
di/dt = 100 A/μs
TEST CIRCUIT 2 SWITCHING TIME
TYP.
59
6.7
6.2
8.4
7.6
4600
370
220
17
13
70
7
85
14
25
0.96
41
56
MAX.
1
±10
2.5
8.6
UNIT
μA
μA
V
S
mΩ
8.3
mΩ
13.3 mΩ
13
mΩ
6900 pF
560
pF
400
pF
37
ns
33
ns
140
ns
18
ns
128
nC
nC
nC
1.5
V
ns
nC
D.U.T.
RG = 25 Ω
L
PG.
50 Ω
VDD
VGS = 20 → 0 V
BVDSS
IAS
ID
VDD
VDS
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
RG
PG.
VGS
0
τ
τ = 1 μs
Duty Cycle ≤ 1%
RL
VDD
VGS
VGS
Wave Form
10%
0
VDS
90%
VDS
VDS
0
Wave Form
td(on)
VGS ^90%
90%
10% 10%
tr td(off) tf
ton
toff
D.U.T.
IG = 2 mA
RL
PG.
50 Ω
VDD
Data Sheet D19798EJ1V0DS
3