NP80N06MLG Datasheet, PDF (10/12 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

NP80N06MLG, NP80N06NLG, NP80N06PLG
PACKAGE DRAWINGS (Unit: mm)
TO-220 (MP-25K)
10.0±0.2 ^{φ 3.8±0.2}
4.45±0.2
1.3±0.2
4
123
2.54 TYP.
1.27±0.2
0.8±0.1
2.54 TYP.
0.5±0.2
2.5±0.2
1. Gate
2. Drain
3. Source
4. Fin (Drain)
TO-262 (MP-25SK)
10.0±0.2
4.45±0.2
1.3±0.2
4
123
2.54 TYP.
1.27±0.2
0.8±0.1
2.54 TYP.
0.5±0.2
2.5±0.2
1. Gate
2. Drain
3. Source
4. Fin (Drain)
TO-263 (MP-25ZP)
No plating
10.0 ±0.3
7.88 MIN.
4
0.5
0.75 ±0.2
2.54
12 3
4.45 ±0.2
1.3 ±0.2
0.025
to 0.25
0.6 _±0.2
0 _{to 8˚}
0.25
1. Gate
2. Drain
3. Source
4. Fin (Drain)
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
8
Data Sheet D19798EJ1V0DS