N0302P_15 Datasheet, PDF (7/8 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

N0302P
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
150
Pulsed
130
VGS = –4.0 V
110
90
–4.5 V
70
50
–10 V
30
10
-0.1
-1
-10
ID - Drain Current - A
-100
APACITANCE vs. DRAIN TO SOURCE VOLTAGE
1000
Ciss
SWITCHING CHARACTERISTICS
100
10
1
-0.1
td(off)
tf
td(on)
tr
VDD = –15 V
VGS = –10 V
RG = 10 Ω
-1
-10
ID - Drain Current - A
-100
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
-100
Pulsed
-10
100
Coss
Crss
VGS = 0 V
f = 1 MHz
10
-0.01
-0.1
-1
-10
VDS - Drain to Source Voltage - V
-100
-1
VGS = 0 V
-0.1
-0.01
0.0
0.5
1.0
1.5
VF(S-D) - Source to Drain Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
-10
ID = –4.4 A
-9
-8
VDD = –24 V
-7
–15 V
–6 V
-6
-5
-4
-3
-2
-1
0
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
QG - Gate Change - nC
5
Data Sheet D20205EJ1V0DS