N0302P_15 Datasheet, PDF (3/8 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
N0302P
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The N0302P is a switching device, which can be driven directly by a 4.0 V
power source.
This N0302P features a low on-state resistance and excellent switching
characteristics, and is suitable for applications such as power switch of
portable machine and so on.
FEATURES
• 4.0 V drive available
• Low on-state resistance
RDS(on)1 = 54 mΩ MAX. (VGS = −10 V, ID = −2.2 A)
RDS(on)2 = 77 mΩ MAX. (VGS = −4.5 V, ID = −2.2 A)
RDS(on)3 = 150 mΩ MAX. (VGS = −4.0 V, ID = −2.2 A)
• Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER LEAD PLATING
N0302P-T1-AT
Marking: XW
Pure Sn (Tin)
PACKING
Tape 3000 p/reel
PACKAGE
SOT-23F
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
−30
V
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC)
Drain Current (pulse) ^Note1
VGSS
m20
V
ID(DC)
m4.4
A
ID(pulse)
m17.6
A
Total Power Dissipation
Total Power Dissipation ^Note2
PT1
0.2
W
PT2
1.3
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
−55 to +150 °C
PACKAGE DRAWING (Unit: mm)
2.9±0.1
3
0.85±0.05
0.165±0.05
0 to 0.025
2 _0.42±0.05 1
1.9
1: Source
2: Gate
3: Drain
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Mounted on FR-4 board of 50 mm × 50 mm × 1.6 mm, copper foil 100%, t ≤ 5 sec.
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this
device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage
may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest
version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for
availability and additional information.
Document No. D20205EJ1V0DS00 (1st edition)
Date Published January 2010 NS
Printed in Japan
2010