N0302P_15 Datasheet, PDF (6/8 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

N0302P
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
-20
-18 ^{VGS = –10 V}
-16
-14
–4.5 V
–4.0 V
-12
-10
-8
-6
-4
-2
Pulsed
0
0 -0.5 -1 -1.5 -2 -2.5 -3
VDS - Drain to Source Voltage - V
FORWARD TRANSFER CHARACTERISTICS
-100
-10
VDS = –10 V
Pulsed
-1
-0.1
-0.01
-0.001
TA = –25°C
25°C
75°C
125°C
-0.0001
0
-1
-2
-3
-4
-5
VGS - Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
-2.4
VDS = –10 V
-2.2 ^{ID = –1 mA}
-2
-1.8
-1.6
-1.4
-1.2
-1
-50
0
50
100
150
Tch - Channel Temperature - °C
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
10
VDS = –10 V
Pulsed
TA = –25°C
1
25°C
75°C
125°C
0.1
0.01
-0.01
-0.1
-1
-10
ID - Drain Current - A
-100
RAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
100
ID = –2.2 A
90 Pulsed
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
170
Pulsed
150
80
130
VGS = –4.0 V
70
110
60
–4.5 V
90
50
70
–10 V
ID = –2.2 A
40
50
30
30
20
-50
0
50
100
150
10
0 2 4 6 8 10 12 14 16 18 20
Tch - Channel Temperature - °C
VGS - Gate to Source Voltage - V
4
Data Sheet D20205EJ1V0DS