N0301P_15 Datasheet, PDF (7/8 Pages) Renesas Technology Corp – P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

N0301P
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
300
Pulsed
200
100
VGS = –2.5 V
–4.5 V
0
-0.01
-0.1
-1
-10
ID - Drain Current - A
-100
SWITCHING CHARACTERISTICS
100
td(off)
tf
tr
10
td(on)
VDD = –15 V
VGS = –4.5 V
RG = 10 Ω
1
0.1
1
10
100
ID - Drain Current - A
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
VGS = 0 V
f = 1 MHz
1000
Ciss
100
Coss
Crss
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
-100
Pulsed
-10
-1
VGS = 0 V
-0.1
-0.01
10
-0.01
-0.1
-1
-10
VDS - Drain to Source Voltage - V
-100
-0.001
0.0
0.5
1.0
1.5
2.0
VF(S-D) - Source to Drain Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
-7
ID = –4.0 A
-6
-5
VDD = –24 V
–15 V
-4
–6 V
-3
-2
-1
0
0 1 2 3 4 5 6 7 8 9 10
QG - Gate Change - nC
5
Data Sheet D20204EJ1V0DS