N0301P_15 Datasheet, PDF (4/8 Pages) Renesas Technology Corp – P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

N0301P
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate to Source Cut-off Voltage
IDSS
IGSS
VGS(off)
VDS = −30 V, VGS = 0 V
VGS = m12 V, VDS = 0 V
VDS = −10 V, ID = −1.0 mA
Forward Transfer Admittance^Note
| yfs |
VDS = −10 V, ID = −2.0 A
Drain to Source On-state Resistance^Note
RDS(on)1 VGS = −4.5 V, ID = −2.0 A
RDS(on)2 VGS = −2.5 V, ID = −2.0 A
Input Capacitance
Ciss
VDS = −10 V,
Output Capacitance
Coss
VGS = 0 V,
Reverse Transfer Capacitance
Crss
f = 1.0 MHz
Turn-on Delay Time
td(on)
VDD = −15 V, ID = −2.0 A,
Rise Time
tr
VGS = −4.5 V,
Turn-off Delay Time
td(off)
RG = 10 Ω
Fall Time
tf
Total Gate Charge
QG
VDD = −24 V,
Gate to Source Charge
QGS
VGS = −4.5 V,
Gate to Drain Charge
QGD
ID = −4.0 A
Body Diode Forward Voltage^Note
VF(S-D)
IF = 4.0 A, VGS = 0 V
Reverse Recovery Time
Trr
IF = 4.0 A, VGS = 0 V,
Reverse Recovery Charge
Qrr
di/dt = 50 A/μs
Note Pulsed
MIN.
−0.5
2.5
TYP.
40
71
780
140
120
12
10
58
44
9.5
1.9
4.5
0.87
41
16
MAX.
−10
m10
−1.5
75
106
UNIT
μA
μA
V
S
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
RG
PG.
VGS (−)
0
τ
τ = 1μs
Duty Cycle ≤ 1%
RL
VDD
VGS (−)
VGS
Wave Form
10%
0
VDS (−)
90%
VDS
VDS
0
Wave Form
td(on)
90%
VGS
90%
10% 10%
tr td(off)
tf
ton
toff
D.U.T.
IG = −2 mA
RL
PG.
50 Ω
VDD
2
Data Sheet D20204EJ1V0DS