N0301P_15 Datasheet, PDF (6/8 Pages) Renesas Technology Corp – P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

N0301P
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
0
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
VGS = –4.5 V
Pulsed
–2.5 V
-1
-2
-3
-4
-5
VDS - Drain to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
-2
VDS = –10 V
ID = –1 mA
-1.5
-1
-0.5
FORWARD TRANSFER CHARACTERISTICS
-100
-10
VDS = –10 V
Pulsed
-1
-0.1
-0.01
-0.001
TA = –25°C
25°C
75°C
125°C
-0.0001
0
-1
-2
-3
-4
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
VDS = –10 V
Pulsed
10
1
TA = –25°C
25°C
75°C
125°C
0.1
0
-50
0
50
100
150
Tch - Channel Temperature - °C
0.01
-0.01
-0.1
-1
-10
ID - Drain Current - A
-100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
100
ID = –2.0 A
Pulsed
80
VGS = –2.5 V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
400
Pulsed
350
300
60
–4.5 V
40
250
ID = –2.0 A
200
150
100
20
50
0
-50
0
50
100
150
0
0
-2
-4
-6
-8 -10 -12
Tch - Channel Temperature - °C
VGS - Gate to Source Voltage - V
4
Data Sheet D20204EJ1V0DS