N0301N Datasheet, PDF (7/8 Pages) Renesas Technology Corp – N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

N0301N
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
100
Pulsed
90
80
70
60
50
VGS = 4.0 V
40
4.5 V
30
10 V
20
10
0
0.1
1
10
100
ID - Drain Current - A
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
1000
Ciss
100
Coss
Crss
VGS = 0 V
f = 1 MHz
10
0.1
1
10
100
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
100
td(off)
10
tf
tr
td(on)
VDD = 15 V
VGS = 10 V
RG = 10 Ω
1
0.1
1
10
100
ID - Drain Current - A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
Pulsed
10
VGS = 0 V
1
0.1
0.01
0.0
0.5
1.0
1.5
2.0
VSD - Source to Drain Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
10
ID = 4.5 A
9
8
7
VDD = 24 V
15 V
6V
6
5
4
3
2
1
0
0 1 2 3 4 5 6 7 8 9 10 11 12
QG - Gate Charge - nC
Data Sheet D20202EJ1V0DS
5