N0301N Datasheet, PDF (4/8 Pages) Renesas Technology Corp – N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

N0301N
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
IDSS
VDS = 30 V, VGS = 0 V
Gate Leakage Current
IGSS
VGS = ±16 V, VDS = 0 V
Gate to Source Cut-off Voltage
Forward Transfer Admittance^Note
Drain to Source On-state Resistance^Note
VGS(off)
| yfs |
RDS(on)1
VDS = 10 V, ID = 1.0 mA
VDS = 10 V, ID = 2.25 A
VGS = 10 V, ID = 2.25 A
RDS(on)2 VGS = 4.5 V, ID = 2.25 A
RDS(on)3 VGS = 4.0 V, ID = 2.25 A
Input Capacitance
Ciss
VDS = 10 V,
Output Capacitance
Coss
VGS = 0 V,
Reverse Transfer Capacitance
Crss
f = 1.0 MHz
Turn-on Delay Time
td(on)
VDD = 15 V, ID = 2.25 A,
Rise Time
tr
VGS = 10 V,
Turn-off Delay Time
td(off)
RG = 10 Ω
Fall Time
tf
Total Gate Charge
QG
VDD = 24 V,
Gate to Source Charge
QGS
VGS = 10 V,
Gate to Drain Charge
Body Diode Forward Voltage^Note
QGD
VF(S-D)
ID = 4.5 A
IF = 4.5 A, VGS = 0 V
Reverse Recovery Time
Reverse Recovery Charge
Trr
IF = 4.5 A, VGS = 0 V,
Qrr
di/dt = 50 A/μs
Note Pulsed
MIN. TYP. MAX. UNIT
10 μA
±10 μA
1.0
2.5 V
2.0
S
29 36 mΩ
36 50 mΩ
40 130 mΩ
400
pF
80
pF
50
pF
6
ns
4
ns
23
ns
4
ns
10
nC
1.5
nC
2.5
nC
0.84
V
20
ns
7
nC
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
RG
PG.
VGS
0
τ
τ = 1μs
Duty Cycle ≤ 1%
RL
VDD
VGS
VGS
Wave Form
10%
0
VDS
90%
VDS
VDS
0
Wave Form
td(on)
VGS
90%
90%
10% 10%
tr td(off)
tf
ton
toff
D.U.T.
IG = 2 mA
RL
PG.
50 Ω
VDD
2
Data Sheet D20202EJ1V0DS