N0301N Datasheet, PDF (6/8 Pages) Renesas Technology Corp – N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

N0301N
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
20
18
16
14
VGS = 4.0 V
12
4.5 V
10 V
10
8
6
4
2
Pulsed
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VDS - Drain to Source Voltage - V
FORWARD TRANSFER CHARACTERISTICS
100
VDS = 10 V
Pulsed
10
1
TA = –25°C
0.1
25°C
75°C
0.01
125°C
0.001
0.0001
0
1
2
3
4
5
VGS - Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
2.2
VDS = 10 V
ID = 1 mA
2.0
1.8
1.6
1.4
1.2
-50
0
50
100
150
Tch - Channel Temperature - °C
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
10
VDS = 10 V
Pulsed
1
0.1
0.01
0.001
TA = –25°C
25°C
75°C
125°C
0.0001
0.0001 0.001 0.01 0.1
1
10
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
100
ID = 2.25 A
Pulsed
80
VGS = 4.0 V
60
4.5 V
10 V
40
20
0
-50
0
50
100
150
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
100
Pulsed
90
80
70
60
50
40
ID = 2.25 A
30
20
10
0
0.0
4.0
8.0 12.0 16.0 20.0
VGS - Gate to Source Voltage - V
4
Data Sheet D20202EJ1V0DS