N0100P_15 Datasheet, PDF (7/8 Pages) Renesas Technology Corp – P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

N0100P
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
100
Pulsed
90
80
VGS = –1.8 V
70
60
50
–2.5 V
–3.0 V
40
–4.5 V
30
20
10
0
-0.1
-1
-10
-100
ID - Drain Current - A
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
VGS = 0 V
f = 1 MHz
1000
Ciss
100
Coss
Crss
1000
SWITCHING CHARACTERISTICS
100
td(off)
tf
tr
td(on)
10
VDD = –6 V
VGS = –4.5 V
RG = 10 Ω
1
-0.1
-1
-10
ID - Drain Current - A
-100
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
-100
Pulsed
-10
VGS = 0 V
-1
-0.1
10
-0.1
-1
-10
VDS - Drain to Source Voltage - V
-100
-0.01
0.0
0.5
1.0
1.5
VF(S-D) - Source to Drain Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
-7
ID = –3.5 A
-6
-5
VDD = –10 V
-4
–6 V
-3
-2
-1
0
0 1 2 3 4 5 6 7 8 9 10 11 12
QG - Gate Change - nC
5
Data Sheet D20203EJ1V0DS