N0100P_15 Datasheet, PDF (6/8 Pages) Renesas Technology Corp – P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

N0100P
-14
-12
-10
-8
-6
-4
-2
0
0
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
VGS = –4.5 V
–3.0 V
–2.5 V
–1.8 V
Pulsed
-0.4 -0.8 -1.2 -1.6
-2
VDS - Drain to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
-1.2
VDS = –10 V
ID = –1 mA
-1
-0.8
-0.6
-0.4
FORWARD TRANSFER CHARACTERISTICS
-100
-10
VDS = –10 V
Pulsed
-1
-0.1
-0.01
-0.001
-0.0001
0
TA = –25°C
25°C
75°C
125°C
-1
-2
-3
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
VDS = –10 V
Pulsed
10 ^{TA = –25°C}
25°C
75°C
125°C
1
-0.2
-50
0
50
100
150
Tch - Channel Temperature - °C
0.1
-0.01
-0.1
-1
-10
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
100
90
VGS = –1.8 V
80
–2.5 V
70
–3.0 V
–4.5 V
60
ID = –1.5 A
50
40
–2.0 A
30
20
10
Pulsed
0
-50
0
50
100
150
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
100
90
80
70
60
50
ID = –2.0 A
40
30
20
10 _Pulsed
0
0 -1 -2 -3 -4 -5 -6 -7 -8
Tch - Channel Temperature - °C
VGS - Gate to Source Voltage - V
4
Data Sheet D20203EJ1V0DS