N0100P_15 Datasheet, PDF (5/8 Pages) Renesas Technology Corp – P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

N0100P
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
TA - Ambient Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
-100
-10
R
D
S(on)
(V^G
i
Lim¹
S ^{= –4}
t ^ed
.5 ^V
)
ID(DC) = –3.5 A
-1
TA = 25°C
Single Pulse
ID(pulse) = –12 A
PW
= _{300 μs}
1_1m
s¹
1_{10 m}
1_{100 m}
s¹
5s
s¹
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Mounted on 2500 mm² x 35 μ m
Coper Pad Connected to
Drain Electrode, t ≤ 5 sec
25 50 75 100 125 150 175
TA - Ambient Temperature - °C
-0.1
-0.01
Mounted on FR-4 board of
50 mm x 50 mm x 1.6 mm,
copper foil 50 mm x 50 mm, t ≤ 5 sec.
-0.1
-1
-10
VDS - Drain to Source Voltage - V
-100
1000
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
Mounted on 2500 mm² x 35 μ m
Coper Pad Connected to Drain Electrode
10
Mounted on FR-4 board of 50 mm x 50 mm x 1.6 mm
1
0.1
0.1 m 1 m
10 m
100 m
1
10
PW - Pulse Width - s
100
1000
3
Data Sheet D20203EJ1V0DS