HAT2201R_15 Datasheet, PDF (7/10 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2201R
20
16
Reverse Drain Current vs.
Source to Drain Voltage
10 V
V_GS = 0 V, –5 V
12
8
4
Pulse Test
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V_SDF (V)
Maximum Avalanche Energy vs.
Channel Temperature Derating
5
I_AP = 6 A
4
V_DD = 50 V
duty < 0.1 %
Rg > 50 Ω
3
2
1
0
25 50 75 100 125 150
Channel Temperature Tch (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
10
D=1
1
0.1
0.01
0.001
0.5
0.2
0.1
0.05
0.02
0.01
1shot ^pulse
0.0001
10 µ 100 µ 1 m
θ _{ch - f(t) =} γ _{s (t) x} θ _{ch - f}
θ _{ch - f = 83.3 °C/W, Ta = 25 °C}
When using the glass epoxy board
(FR4 40x40x1.6 mm)
PDM
PW
T
D=
PW
T
10 m 100 m 1
10
Pulse Width PW (s)
100 1000 10000
Rev.3.00, Apr.07.2004, page 5 of 7