HAT2201R_15 Datasheet, PDF (3/10 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2201R
Silicon N Channel Power MOS FET
Power Switching
Features
• Capable of 8 V gate drive
• Low drive current
• High density mounting
• Low on-resistance
R_DS(on) = 34 mΩ typ. (at V_GS = 10 V)
Outline
SOP-8
8 ^{7 65}
56 7 8
DD D D
1 ²³⁴
4
G
SSS
12 3
1, 2, 3 Source
4
Gate
5, 6, 7, 8 Drain
REJ03G0233-0300Z
Rev.3.00
Apr.07.2004
Rev.3.00, Apr.07.2004, page 1 of 7