HAT2201R_15 Datasheet, PDF (6/10 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2201R
Static Drain to Source on State Resistance
vs. Temperature
100
Pulse Test
80
1 A, 2 A, 5 A
60
40 ^{VGS = 8 V}
20
10 V
I_D = 1 A, 2 A, 5 A
0
-25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Body–Drain Diode Reverse
Recovery Time
100
50
20
di/dt = 100 A/µs
10
0.1
V_GS = 0, Ta = 25°C
1
10
100
Reverse Drain Current I_DR (A)
Dynamic Input Characteristics
250
20
I_D = 6 A
200
V_DS = 100 V
50 V
25 V
150
V_GS ¹⁶
12
V_DS
100
8
50
V_DS = 100 V
4
50 V
25 V
0
0
8
16 24 32 40
Gate Charge Qg (nC)
Forward Transfer Admittance vs.
Drain Current
100
Tc = –25°C
10
25°C
1
75°C
0.1
0.1
V_DS = 10 V
Pulse Test
0.3 1 3 10 30 100
Drain Current I_D (A)
10000
Typical Capacitance vs.
Drain to Source Voltage
3000
Ciss
1000
300
Coss
100
Crss
30 _{VGS = 0}
f = 1 MHz
10
0
10
20 30 40 50
Drain to Source Voltage V_DS (V)
1000
Switching Characteristics
V_GS = 10 V, V_DS = 30 V
Rg = 4.7 Ω, duty < 1 %
100
10
1
0.1
td(off)
td(on)
tf
tr
1
10
100
Drain Current I_D (A)
Rev.3.00, Apr.07.2004, page 4 of 7